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      V oltage: 20 to 100 Volts Current: 1.0 Amp RoHS Device Page 1 REV:B CDBFN120-HF Thru CDBFN1100-HF Dimensions in inches and (millimeter) QW-JB001 SOD-323 SMD Schottky Barrier Rectifiers Comchip Technology CO., LTD. Parameter Symbol CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN 120-HF 130-HF 140-HF 150-HF 160-HF 180-HF 1100-HF Unit Repetitive peak reverse voltage Maximum RMS voltage Continuous reverse voltage Maximum forward voltage @IF=1.0A Forward rectified current Forward surge current, 8.3ms half sine wave superimposed on rated load (JEDEC method) Typ. thermal resistance, junction to ambient air Typ. diode junction capacitance (Note 1) Operating junction temperature Storage temperature VRRM VRMS VR VF IO IFSM IR RθJA CJ TJ TSTG 20 14 20 30 21 30 40 28 40 1.0 30 0.5 10 90 120 50 35 50 60 42 60 0.55 0.70 -55 to +125 -55 to +150 V V V V A A mA Note 1: f=1MHz and applied 4V DC reverse voltage. -65 to +175 Features - Batch process design, excellent powe Mechanical data -Case: JEDEC SOD-323, Molded plastic -Terminals: Solde plated, solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -Mounting position: Any -W eight:0.008 gram(approx.). dissipation of fers better reverse leakage current. -Low profile surface mounted application in order to optimize board space. -Low power loss, high ef ficiency. -High current capability , low forward voltage dorp. -High surge capability . -Guardring for overvoltage protection. -V ery iny plastic SMD package. -Ultra high-speed switching. -Silicon epitaxial planarchip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228 Reverse current on VR=VRRM @TA=25°C @TA=125°C pF °C °C °C/W Maximum Ratings (at TA=25°C unless otherwise noted) 80 56 80 100 70 100 0.85 0.012(0.3) Typ. 0.016(0.4) Typ. 0.016(0.4) Typ. 0.106 (2.70) 0.091 (2.30) 0.057 (1.45) 0.041 (1.05) 0.047 (1.2) 0.031 (0.8) Halogen free |